Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates
نویسندگان
چکیده
GaInAsSbBi solid solutions with different Bi contents are synthesized on n-GaSb substrates a misorientation of 6 o between the (100) and (111)A planes. Structural properties morphology thin films studied. Transmission electron microscopy X-ray diffraction have shown that polycrystalline structure. It is found an increase in concentration solution leads to decrease average size region coherent scattering by (111) reflection from 20 5 nm. lower content Bi, thickness transition amorphous layer at ?layer-substrate? heterointerface decreases. Keywords: solutions, GaInAsSbBi, GaSb, III-V compounds.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2022
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/tpl.2022.05.53481.19164